| Skip to main content | Skip to sub navigation |

This is now an inactive research group it's members have moved on. You can find them at their new research groups:

ECS Intranet:
Vertical MOSFET's


100 nm Vertical MOSFET

Over the past 20 years, the channel length of MOS transistors has halved at intervals of approximately every two or three years, which has led to a virtuous circle of increasing packing density (more complex electronic products), increasing performance (higher clock frequencies) and decreasing costs per unit silicon area. To continue on this path, Research is underway at Southampton University to investigate an alternative method of fabricating short-channel MOS transistors, socalled Vertical MOSFET's. In these devices the channel is perpendicular to the wafer surface in stead of in the plane of the surface. Vetical MOSFET's have three main advantages:

Homepage: http://www.micro.ecs.soton.ac.uk/silelec/cmos_limit.html
Type: Normal Research Project
Research Groups: Nano Research Group, Southampton Nanofabrication Centre
Themes: Nanoelectronics, Nanomaterials and Dielectrics
Dates: 1st January 2003 to 1st January 2011

Relevant Links

Partners

Funding

Principal Investigators

Other Investigators

URI: http://id.ecs.soton.ac.uk/project/116
RDF: http://rdf.ecs.soton.ac.uk/project/116

More information

You can edit the record for this project by visiting http://secure.ecs.soton.ac.uk/db/projects/editproj.php?project=116