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This is now an inactive research group it's members have moved on. You can find them at their new research groups:

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Schottky barriers for spin injection

Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities. The Ni-Si Schottky barrier is characterized and found to be of very high quality for relatively low Si resistivities (1-2 Ohmcm with leakage currents order of magnitudes lowe than for sputtered barriers. This shows that electrodeposition of magnetic materials on Si is a viable fabrication technique for magnetoresistance and spintronics applications. This technique will be used to investigate spin injection into Si and to fabricate spin transistors

Type: Normal Research Project
Research Groups: Nano Research Group, Southampton Nanofabrication Centre
Themes: Quantum Electronics and Spintronics, Nanoelectronics
Dates: 1st April 2005 to 1st April 2010


Principal Investigators

Other Investigators

URI: http://id.ecs.soton.ac.uk/project/311
RDF: http://rdf.ecs.soton.ac.uk/project/311

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