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This is now an inactive research group it's members have moved on. You can find them at their new research groups:

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Phase Change Memory Materials via Non-Aqueous Electrodeposition into Nano-structured Templates


Memory switching characteristics of electrodeposited GST devices

This project is concerned with developing non-aqueous electrochemical methods and suitably tailored reagents to facilitate spatially selective electrodeposition of binary (e.g. In2(Se,Te)3, Sb2(Se,Te)3, Ge(Se,Te)) and ternary chalcogenide materials (e.g. Ge2Sb2Te5, doped Sb2Te3) for applications in solid-state phase change memory (PCM). The key objectives are to demonstrate successful selective deposition of the target materials inside nano-scale (down to 2 nm) confined cell structures and to establish the effect of down-scaling pore size on the deposition process. Successful electrodeposition of well-defined compound semiconductor alloy compositions of these types will provide a significant new enabling technology which could also have a major impact on the other applications requiring semiconductor alloy deposition on a nano-scale.

Homepage: https://adept.soton.ac.uk/
Type: Normal Research Project
Research Group: Nano Research Group
Themes: Nanoelectronics, Quantum Electronics and Spintronics, Materials & Technology
Dates: 1st February 2010 to 1st July 2021

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URI: http://id.ecs.soton.ac.uk/project/844
RDF: http://rdf.ecs.soton.ac.uk/project/844

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